氧氩比对SnO2/Ag/SnO2透明导电膜光电性能的影响

在室温及不同的氧氩比条件下,采用射频磁控溅射Ag层和直流磁控溅射SnO₂层,在载玻片衬底上制备出了SnO₂/Ag/SnO₂多层薄膜.用霍尔效应测试仪、四探针电阻测试仪和紫外-可见-近红外光谱仪等表征了薄膜的电学性质和光学性质.实验结果表明:当氧氩比为1:14时,所制得的薄膜的光电性质优良指数最大,为1.69×10^-2 Ω^-1;此时,薄膜的电阻率为9.8×10^-5 Ω·cm,方电阻为9.68 Ω/sq,在400~800 nm可见光区的平均光学透射率达85%;并且,在氧氩比为1:14时,利用射频磁控溅射Ag层和直流磁控溅射SnO₂层在PET柔性衬底上制备出了光电性质优良的柔性透明导电膜,其在可见光区的平均光学透过率达85%以上,电阻率为1.22×10^-4 Ωcm,方电阻为12.05 Ω/sq.

Influence of O2/Ar Ratio on the Properties of Transparent Conductive SnO2/Ag/SnO2 Tri-layer Film

SnO₂/Ag/SnO₂ tri-layer thin films were prepared on glass substrates by RF magnetron sputtering of SnO₂ with different O₂/Ar ratio and DC magnetron sputtering of Ag. Several analytical tools such as Hall measurements, four-point probe and ultraviolet-visible-near infrared (UV-Vis-NIR) spectrophotometer were used to explore the causes of the changes in electrical and optical properties. When O₂/Ar ratio is 1:14, the film had a figure of merit of 1.69×10^-2 Ω^-1, the resistivity is 9.8×10^-5 Ω·cm, and the sheet resistance is 9.68Ω/sq, while the average transmittance is still as high as 85% in the visible light region. In addition,when O₂/Ar ratio is 1:14, The flexible SnO₂/Ag/SnO₂ tri-layer thin films with excellent photoelectric performance can be obtained by magnetron sputtering on PET substrates, the average transmittance is above 85%, the resistivity is 1.22×10^-4 Ω·cm, and the sheet resistance is 12.05 Ω/sq.