磷分子离子(P2+)注入硅的损伤行为

本文研究了不同能量(5—600keV)和不同剂量(10¹⁴-10¹⁶atom/cm²)下的P₂⁺和P⁺注入〈100〉单晶硅后的损伤及退火行为。实验结果表明,P₂⁺注入所产生的损伤总是大于P⁺注入所产生的损伤。由移位效率之比N_D^*(mol)/2N_D^*(atom)所表征的分子效应随入射能量的改变而变化并在100keV(P₂⁺),50keV(P⁺)处达到极大值。P₂⁺与P⁺注入的样品,退火后的载流子分布也有某些区别。我们认为,产生这些分子效应的基本原因是位移尖峰效应,但当入射离子的能量较高时,还应该考虑离子、靶原子之间的多体碰撞效应的贡献。 关键词：

A STUDY OF DAMAGE IN SILICON CREATED BY P2+ IMPLANTATION

The damage and annealing behavior of <100> Si implanted at room temperature with P₂⁺ and P⁺ at different energies (5-600 keV) and intermediate dose (～10¹⁴/cm²) has been investigated. Experimental results show that the damage created by P₂⁺ implantation is always greater than that of P⁺ implantation. The ratio of total displaced atoms of the target cuased by molecular and N_D(mol)/N_D(atom)reached a maximal value at 100 keV (P₂⁺)and 50 keV (P⁺) after rapid thermal annealing, the carrier concentration profiles measured by spreading resistance measurement are also different for the P₂⁺ and P⁺ implanted samples. We attribute essentially this phenomenon to the displacement spike, but the multiple collision effect and the interaction between two molecular fragments should be considered when the incident energy is high.