Deep trench etching in macroporous silicon |
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| Authors: | T. Geppert S.L. Schweizer U. Gösele R.B. Wehrspohn |
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| Affiliation: | (1) Max-Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany;(2) Nanophotonic Materials Group, Department Physik, University of Paderborn, Warburger Str. 100, 33098 Paderborn, Germany |
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| Abstract: | We present a method to create at the same time trenches and ordered macropore arrays during photo-electrochemical etching of n-type silicon. This novel method allows in situ separation of single devices with a submicrometer precision. It also enables new device structures in macroporous silicon in the areas of photonics, sensing and electronics. The limits of this new process are simulated using electrostatic models and are verified experimentally. PACS 82.45.Yz; 81.16.-c |
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