有机半导体异质界面电荷传输解析模型研究

有机半导体多层薄膜器件的性质很大程度上由有机-有机界面的传输性质所决定，但是现有的关于有机-有机界面的分析模型很难适用于实际器件的模拟.以Miller-Abrahams跳跃传导理论为基础，充分考虑有机-有机界面和金属-有机界面性质的不同，建立了一个新的描述有机-有机异质界面电荷传输的解析模型.结果表明有机异质界面的载流子传输不仅取决于界面的肖特基势垒，而且还取决于界面附近两边的电场强度和载流子浓度.此模型可用于有机半导体多层薄膜器件的电流密度、电场分布和载流子浓度分布的自洽计算. 关键词： 有机半导体 界面 载流子传输

Analytical model of charge transport at organic semiconductor interfaces

The performances of organic semiconductor thin film devices are largely determined by the transport properties of the organic-organic (OO) interfaces，but many present theories concerning charge transport at OO interfaces are not suitable for practical device modelling. Based on the Miller-Abrahams formalism for hopping conduction, an analytical model for charge transport at OO interfaces has been developed by considering the difference between OO interfaces and metal-organic interfaces. The result shows that the transport of carriers at an OO interface depends not only on the energy barrier of the interface, but also on the carrier concentration and the electric field at the two sides of the interface. This model can be used to self-consistent calculations of the current density, field distribution and other characteristics in multiplayer organic semiconductor devices.