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High-resolution photoluminescence studies of (211) CdTe grown on (211)B GaAs substrate |
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| Authors: | S. D. Chen L. Lin X. Z. He Z. Y. Xu C. P. Luo J. Z. Xu |
| Affiliation: | a North China Research Institute of Electro-optics, P.O. Box 8511-39, Beijing 100015, People's Republic of China b Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China |
| Abstract: | Sharp and rich photoluminescence lines accociated with free exciton (FE), excitons bound to neutral acceptors (A0X) and donors (D0X) in molecular beam epitaxially (MBE) grown (211) CdTe/(211)B GaAs have been reported for the first time. The results show that the (211) CdTe/(211)B GaAs grown under optimized conditions could have as high a crystal perfection as those grown on lattice-matched substrates. |
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