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ZnSe sintered films: Growth and characterization |
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| Authors: | Vipin Kumar K.L.A. Khan T.P. Sharma |
| Affiliation: | a Department of Physics, Krishna Institute of Engineering & Technology, Ghaziabad, India b Department of Mechanical Engineering, Krishna Institute of Engineering & Techonology, Ghaziabad, India c Department of Electrical Engineering, Krishna Institute of Engineering & Techonology, Ghaziabad, India d Department of Physics, Rajasthan University, Jaipur, India e Department of Physics, Jamia Millia Islamia, New Delhi 110025, India |
| Abstract: | The II-VI compound semiconductor, ZnSe having wide band gap between 2.58 and 2.82 eV is a promising material for use in photovoltaic devices, blue light emitting diodes and laser diodes. Several methods have been used to prepare ZnSe thin films. We have deposited ZnSe films on ultra-clean glass substrate by sintering technique. The optical, structural and electrical properties of ZnSe thin films have been examined. The optical band gap of these films is studied using reflection spectra in wavelength range 325-600 nm and structure of these films is studied using XRD. The DC conductivity of the films was measured in vacuum by two-probe technique.Sintering is a very simple and viable method compared to other intensive methods. The results of the present investigation will be useful in characterizing the material ZnSe for its applications in photovoltaics. |
| Keywords: | 78.20.Ci 78.50.Ge 78.66.&minus w 78.66.Hf |
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