In-bulk and surface structuring of sapphire by femtosecond pulses |
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Authors: | Saulius Juodkazis Koichi Nishimura |
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Affiliation: | a Research Institute for Electronic Science, Hokkaido University, North 21-West 10, CRIS Bldg., Kita-ku, Sapporo 001-0021, Japan b Core Research for Evolution Science & Technology (CREST), Japan Science & Technology Corporation (JST), Japan |
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Abstract: | The actual space-time dependent intensity distribution of a tightly focused (numerical aperture NA = 1.35) Gaussian femtosecond pulse is modeled inside dielectric material. Such focusing is typically used for recording with sub-wavelength resolution inside dielectrics. The multi-pulse structuring inside the bulk and on the surface of sapphire are demonstrated. Formation of nano-cracks and nano-crystals is revealed inside the crystalline sapphire. Ripple formation on the surface is discussed in terms of the efficacy map calculated by theory given in ref. [J.E. Sipe, J.F. Young, J.S. Preston, H.M. van Driel, Laser-induced periodic surface structure. I. Theory, Phys. Rev. B 27 (2) (1983) 1141-1154.]. |
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Keywords: | Dielectric breakdown Femtosecond laser micofabrication Micro-explosion Sapphire |
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