Effects of hydrogen flux on the properties of Al-doped ZnO films sputtered in Ar + H2 ambient at low temperature |
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| Authors: | W.F. Liu Y.F. Sun Y. Cheng Y.C. Chang |
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| Affiliation: | a State Key Laboratory for Materials Modification by Laser, Ion, Electron Beams, Department of Physics, Dalian University of Technology, Dalian Liaoning 116024, China
b State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jinlin University, Changchun Jilin 130023, China |
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| Abstract: | Al-doped ZnO (AZO) transparent conductive thin films were grown by magnetron sputtering with AZO (98 wt.% ZnO, 2 wt.% Al2O3) ceramic target in Ar + H2 ambient at a relatively low temperature of 100 °C. To investigate the dependence of crystalline and properties of as-grown AZO films on the H2-flux, X-ray diffraction (XRD), X-ray photoemission spectrometer (XPS), Hall and transmittance spectra measurements were employed to analyze the AZO samples deposited with different H2-flux. The results indicate that H2-flux has a considerable influence on the transparent conductive properties of AZO films. The resistivity of 4.15 × 10−4 Ω cm and the average transmittance of more than 94% in the visible range were obtained with the optimal H2-flux of 1.0 sccm. Such a low temperature growing method present here may be especially useful for some low-melting point photoelectric devices and substrates. |
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| Keywords: | H2 Al-doped ZnO (AZO) Transparent conductive oxides XPS Low temperature deposition |
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