The characteristics of platinum diffusion in n-type GaN |
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| Authors: | Der-Hwa Yeh Liann-Be Chang |
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| Institution: | a Department of Electrical Engineering, Chung-Cheng Institute of Technology, National Defense University, Tashi, Taoyuan 335, Taiwan, Republic of China
b Department of Electronic Engineering, Chang-Gung University, Kwei-Shan, Taoyuan 333, Taiwan, Republic of China |
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| Abstract: | The electrical and optical characteristics of platinum (Pt) diffusion in n-type gallium nitride (GaN) film are investigated. The diffusion extent was characterized by the SIMS technique. The temperature-dependent diffusion coefficients of Pt in n-GaN are 4.158 × 10−14, 1.572 × 10−13 and 3.216 × 10−13 cm2/s at a temperature of 650, 750 and 850 °C, respectively. The Pt diffusion constant and activation energy in GaN are 6.627 × 10−9 cm2/s and 0.914 eV, respectively. These results indicate that the major diffusion mechanism of Pt in GaN is possibly an interstitial diffusion. In addition, it is also observed that the Pt atom may be a donor because the carrier concentration in Pt-diffused GaN is higher than that in un-diffused GaN. The optical property is studied by temperature-dependent photoluminescence (PL) measurement. The thermal quenching of the PL spectra for Pt-diffused GaN samples is also examined. |
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| Keywords: | 66 30 Jt |
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