Observation of triangle pits in PbSe grown by molecular beam epitaxy |
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Authors: | T.N. Xu H.Z. Wu J.X. Si C.F. Cao |
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Affiliation: | a Department of Physics, Zhejiang University, Hangzhou 310027, PR China b State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, PR China |
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Abstract: | PbSe thin films on BaF2 (1 1 1) were grown by molecular beam epitaxy with different selenium beam flux. Evolution of PbSe surface morphologies with Se/PbSe beam flux ratio (Rf) has been studied by atomic force microscopy and high-resolution X-ray diffraction. Growth spirals with monolayer steps on PbSe surface are obtained using high beam flux ratio, Rf ≥ 0.6. As Rf decreases to 0.3, nano-scale triangle pits are formed on the surface and the surface of PbSe film changes to 3D islands when Rf = 0. Glide of threading dislocations in 〈1 1 0〉{1 0 0}-glide system and Pb-rich atom agglomerations are the formation mechanism of spiral steps and triangle pits. The nano-scale triangle pits formed on PbSe surface may render potential applications in nano technology. |
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Keywords: | 68.55.Jk 68.37.Ps 81.05.Hd |
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