Electrochemical synthesis and optical properties of ZnO thin film on In2O3:Sn (ITO)-coated glass |
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| Authors: | Changdong Gu Jianshe Lian Guoqu Zheng |
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| Institution: | a Key Lab of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Nanling Campus, Changchun 130025, China
b College of Chemical Engineering and Material Science, Zhejiang University of Technology, Hangzhou 310014, China |
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| Abstract: | ZnO thin films were electrochemically deposited onto the ITO-coated glass substrate from an electrolyte consisted of 0.1 M Zn(NO3)2 aqueous solution at 65 ± 1 °C. A compact ZnO film with (0 0 2) preferred orientation was obtained at the applied potential of −1.3 V for 1200 s. It was also found that the morphology of the ZnO films grown at the potential of −1.3 V was characterized of single or coalescent hexagonal platelets. However, the ZnO crystals grown at the potential of −2.0 V was changed to be a bimodal size distribution. The band gap energy of the as deposited ZnO films, about 3.5 eV, was independent of both the applied potential and the deposition time, respectively. The minor amount of Zn(OH)2 might be co-deposited with the formation of ZnO revealed by the FT-IR spectroscopy. Three strategies to improve the ZnO crystal quality based on the photoluminescence properties were proposed in the paper, which were (a) adopting the lower deposition potential, (b) increasing the deposition time at a certain potential, and (c) annealing after as-deposition, respectively. |
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| Keywords: | 61 46 Hk 61 82 Fk 67 70 +n 78 20 &minus e |
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