Crystal structure of stacking faults in InGaAs/InAlAs/InAs heterostructures |
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| Authors: | I. N. Trunkin M. Yu. Presniakov A. L. Vasiliev |
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| Affiliation: | 1.National Research Centre “Kurchatov Institute”,Moscow,Russia;2.Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”,Russian Academy of Sciences,Moscow,Russia |
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| Abstract: | ![]()
Stacking faults and dislocations in InGaAs/InAlAs/InAs heterostructures have been studied by electron microscopy. The use of different techniques of transmission electron microscopy (primarily, highresolution dark-field scanning transmission electron microscopy) has made it possible to determine the defect structure at the atomic level. |
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