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Growth of InN films and nanorods by H-MOVPE |
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| Authors: | Hyun Jong Park Olga Kryliouk Tim Anderson Dmitry Khokhlov Timur Burbaev |
| Affiliation: | aDepartment of Chemical Engineering, University of Florida, Gainesville, P.O. Box 116005, FL 32611-6005, USA;bPhysics Department, Moscow State University, Moscow, 119992, Russia;cLebedev Physical Institute, Moscow 119991, Russia |
| Abstract: | InN films and nanorods were grown by hydride metalorganic vapor phase epitaxy (H-MOVPE) and the effects of growth temperature, and NH3/TMIn and HCl/TMIn ratios on morphological dependences were studied. The growth habit of InN varied from thin film to microrod to nanorod to no deposition as the growth conditions were changed about transition from growth to etching conditions. The growth and etch regimes were also predicted by chemical equilibrium calculations of In–C–H–Cl–N-inert system. The optical properties of InN nanorods and columnar structured films were measured by room temperature PL and a maximum intensity was observed at 1.08 eV for both structures. |
| Keywords: | InN Indium nitride Nanorods Films Photoluminescence Bandgap H-MOVPE Thermodynamics Equilibrium calculation Morphology |
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