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Laser doping: bipolar structures in silicon |
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| Authors: | K. G. Ibbs M. L. Lloyd |
| Affiliation: | The authors are in the GEC Research Laboratories, Hirst Research Centre, Wembley, UK |
| Abstract: | Ultra-violet laser doping of silicon with boron and phosphorus, formed by the dissociation of trimethyl boron and phosphorus trichloride, has been achieved with sufficient control over concentration and depth to yield npn bipolar structures. |
| Keywords: | lasers doping silicon boron phosphorus |
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