| Electron Holography of Barrier Structures in Co／ZrAlOx／Co Magnetic Tunnel Junctions |
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| 引用本文： | 张喆,朱涛,沈峰,盛雯婷,王为刚,肖强,张泽.Electron Holography of Barrier Structures in Co／ZrAlOx／Co Magnetic Tunnel Junctions[J].中国物理快报,2005,22(7):1732-1735. |
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| 作者姓名： | 张喆 朱涛 沈峰 盛雯婷 王为刚 肖强 张泽 |
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| 作者单位： | [1]DepartmentofPhysicsandAstronomy,UniversityofDelaware,Newark,DE19716,USA [2]BeijingLaboratoryofElectronMicroscopy,InstituteofPhysics,ChineseAcademyofSciences,Beijing100080 [3]StateKeyLaboratoryforMagnetism,InstituteofPhysics,ChineseAcademyofSciences,Beijing100080 [4]BeijingLaboratoryofElectronMicroscopy,InstituteofPhysics,ChineseAcademyofSciences,Beijing100080／／DepartmentofMaterialsSciencesandEngineering,BeijingUniversityofTechnology,Beijing100022 |
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| 摘 要： | We investigate the potential profiles and elemental distribution of barriers in Co/ZrAlOx/Co magnetic tunnel junctions (MTJs) using electron holography (EH) and scanning transmission electron microscopy. The MTJ barriers are introduced by oxidizing a bilayer consisting with a uniform 0.45-nm Al layer and a wedge-shaped Zr layer (0-2 nm). From the scanning transmission electron microscopy, AlOx and ZrOx layers are mixed together, indicating that compact AlOx layer cannot be formed in such a bilayer structure of barriers. The Eli results reveal that there are no sharp interfaces between the barrier and magnetic electrodes, which may be responsible for a smaller tunnelling magnetoresistance compared with the MTJs of Co/AlOx/Co.
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| 关 键 词： | 电子全息摄影 势垒结构 钴锆铝合金 磁性隧道结 表面性质 |
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