A wavelength-dispersive arrangement for wafer analysis with total reflection X-ray fluorescence spectrometry using synchrotron radiation

Currently, the only apparent means to enhance the detection power of the TXRF technique would be to increase the intensity of the primary beam. Using synchrotron radiation, the most powerful X-ray source available, unfortunately, not only the fluorescence signal of the contaminant elements is increased, but also in equal measure, the intensities of the Si–K radiation from the wafer together with the scattered radiation. This results in an overloading of the energy-dispersive Si (Li) detector systems used hitherto, with the effect that the available primary intensity cannot be fully exploited. Wavelength-dispersive systems are free of such problems; they generate less detector background and can withstand higher count rates. Due to their small angle of acceptance, however, their detection efficiency is quite low. In this contribution we propose a wavelength-dispersive TXRF solution, which is optimized with regard to higher efficiency on the basis of large area multilayer mirrors in combination with a position-sensitive detector. The count rates in relation to energy-dispersive instruments and the energy resolution of the new system have been calculated using ray-tracing techniques.