Passively Q-switched and mode-locked diode-pumped Nd:YVO4 laser with LT-GaAs output coupler |
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| Authors: | Jie Liu Yonggang Wang Jingliang He |
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| Affiliation: | a College of Physics and Electronics, Shandong Normal University, Jinan 250014, China
b Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100022, China |
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| Abstract: | We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064 nm Nd:YVO4 laser by using a low temperature grown GaAs (LT-GaAs) saturable absorber as well as an output coupler. Stable QML with envelope duration as short as 10 ns and Q-switched repetition rate of 36 kHz was obtained. It is the shortest envelope duration as far as we know, and it is so short that it can be used as Q-switching pulses directly. At 6.9 W of the incident pump power, average output power of 1.24 W was achieved and the corresponding peak power and energy of a single Q-switched pulse were 3.44 kW and 34.4 μJ, respectively. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 780 MHz. |
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| Keywords: | 42.55Xi 42.55Rz 42.60Fc 42.60Gd |
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