Measurement of thermal rise-time of a laser diode based on spectrally resolved waveforms |
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Authors: | Chen Chen Guofeng Xin Ronghui Qu Zujie Fang |
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Affiliation: | Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Qinghe Road No. 390, Shanghai 201800, China |
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Abstract: | ![]() Thermal resistance and thermal rise-time are two basic parameters that affect most of the performances of a laser diode greatly. By measuring waveforms received after a spectroscope at wavelengths varied step-by-step, the spectrally resolved waveforms can be converted to calculate the thermal rise-time. Basic formulas for the spectrum variation of a laser diode and the measurement set-up by using a Boxcar are described in the paper. As an example, the thermal rise-time of a p-side up packaged short-pulse laser diode was measured by the method to be 390 μs. The method will be useful in characterizing diode lasers and LD modules in high-power applications. |
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Keywords: | Laser diode Thermal rise-time Spectrally resolved waveform |
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