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| Structural and photoluminescent properties of ZnO films deposited by radio frequency reactive sputtering | |
| 作者姓名： | PENG XingPing WANG ZhiGuang SONG Yin JI Tao ZANG Hang YANG YingHu & JIN YunFan Institute of Modern Physics Chinese Academy of Sciences Lanzhou China School of Physics Science and Technology Lanzhou University Lanzhou China |
| 作者单位： | PENG XingPing1，2，WANG ZhiGuang1，SONG Yin1，JI Tao2，ZANG Hang1，YANG YingHu2 & JIN YunFan1 1 Institute of Modern Physics，Chinese Academy of Sciences，Lanzhou 730000，China; 2 School of Physics Science and Technology，Lanzhou University，Lanzhou 730000，China |
| 基金项目： | 国家自然科学基金;国家自然科学基金 |
| 摘 要： | Zinc oxide films with c-axis preferred orientation were deposited on silicon (100) substrates by radio frequency (RF) reactive sputtering. The properties of the sam- ples were characterized by X-ray diffractometer, X-ray photoelectron spectroscopy and fluorescent-spectrophotometer. The effect of sputtering power and substrate temperature on the structural and photoluminescent (PL) properties of the ZnO films was investigated. The results indicated that when the sputtering power is 100 W and the substrate temperature is 300-400℃, it is suitable for the growth of high c-axis orientation and small strain ZnO films. A violet peak at about 380 nm and a blue band at about 430 nm were observed in the room temperature photolumines- cence spectra, and the origin of blue emission was investigated. |
| 收稿时间： | 17 January 2006 |
| 修稿时间： | 18 September 2006 |
Structural and photoluminescent properties of ZnO films deposited by radio frequency reactive sputtering |
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| PENG XingPing,,WANG ZhiGuang,SONG Yin,JI Tao,ZANG Hang,YANG YingHu & JIN YunFan Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou ,China, School of Physics Science and Technology,Lanzhou University,Lanzhou ,China.Structural and photoluminescent properties of ZnO films deposited by radio frequency reactive sputtering[J].Science in China(Physics Astronomy),2007,50(3):281-286. | |
| Authors: | Peng XingPing Wang ZhiGuang Song Yin Ji Tao Zang Hang Yang Yinghu Jin YunFan |
| Institution: | 1. Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;School of Physics Science and Technology, Lanzhou University, Lanzhou 730000, China 2. Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China 3. School of Physics Science and Technology, Lanzhou University, Lanzhou 730000, China |
| Abstract: | Zinc oxide films with c-axis preferred orientation were deposited on silicon (100) substrates by radio frequency (RF) reactive sputtering. The properties of the samples were characterized by X-ray diffractometer, X-ray photoelectron spectroscopy and fluorescent-spectrophotometer. The effect of sputtering power and substrate temperature on the structural and photoluminescent (PL) properties of the ZnO films was investigated. The results indicated that when the sputtering power is 100 W and the substrate temperature is 300–400°C, it is suitable for the growth of high c-axis orientation and small strain ZnO films. A violet peak at about 380 nm and a blue band at about 430 nm were observed in the room temperature photoluminescence spectra, and the origin of blue emission was investigated. Supported by the National Science Fund for Distinguished Young Scholars (Grant No. 10125522), the National Natural Science Foundation of China (Grant No. 10475102) and the “Xi-Bu-Zhi-Guang” Program of the Chinese Academy of Sciences |
| Keywords: | ZnO films XRD spectra PL spectra substrate temperature RF reactive sputtering |
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