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Q-band injection-locked gunn diode oscillator
Authors:Xiaowei Zhu   Yiyuan Chen  Wei Hong
Affiliation:(1) State Key Laboratory of Millimeter Waves Department of Radio Engineering, Southeast University, 210096 Nanjing, People's Republic of China
Abstract:
The configuration and performance of a Q-band injection-locked Gunn oscillator are presented whose outport is connected with a phase-locked reference source by a circulator. The output power of the oscillator is more than 60mW at 46.1GHz. The single-sideband phase noise (SSB) is less than-71.7dBc/Hz offset 10KHz from the carrier, and the spectrum of clutter signal is less than -40dB.
Keywords:Injection-locked oscillator  Gunn diode oscillator  Millimeterwave oscillator
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