Effect of pressure on the properties of DH diode lasers in AlxGa1-xAsySb1-y/GaSb system |
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| Authors: | J Friedenthal A Gerst P Louk A Niilisk A Rosental A Virro |
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| Institution: | Institute of Physics, Estonian Academy of Sciences , 202400 Tartu, Estonia , USSR |
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| Abstract: | Abstract A helium pressure appparatus for diode laser studies up to 1.4 GPa at 77–300 K has been developed. DH lasers with AlxGa1-xAsySb1-y active layers (x=0-0.05) lattice-matched to GaSb substrates have been investigated. It has been shown that in lasers with x,y=0 pressure dependences of the threshold current density (Jth) and the average electron lifetime at the threshold (τ) measured at 80 K depend strongly on the quadratic recombination of Lc 6 electrons, the characteristic coefficient being 1.5×10?11 cm3s?1. The pressure-composition equivalence coefficient dx/dP=2.2×10?10 Pa?1 has been obtained for the lowest temperatures used. |
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| Keywords: | heterostructure lasers high pressure AlxGa1-xAsySb1-y quaternary threshold current electron lifetime |
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