A new route for the synthesis of nitrides: The solvothermal preparation of GaN |
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| Authors: | C. Collado G. Demazeau B. Berdeu A. Largeteau W. Lai-Tiong |
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| Affiliation: | 1. Institut de Chimie de la Matiire Condensée de Bordeaux , 87 avenue A. Schweitzer, 33608, PESSAC Cedex, France;2. Interface Hautes Pressions, E.NS.C.P.B./I.C.M.C.B. Avenue Pey Perland , BP 108, 33402, TALENCE Cedex, France;3. Interface Hautes Pressions, E.NS.C.P.B./I.C.M.C.B. Avenue Pey Perland , BP 108, 33402, TALENCE Cedex, France |
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| Abstract: | ![]()
Abstract A new solvothermal route for the synthesis of nitrides is proposed using liquid NH3 as solvent in supercritical conditions, Such a preparation method was applied to the synthesis of GaN using gallium metal as starting material. GaN is a wide band-gap semi-conductor (3.4eV). It is a very attractive nitride due to its various applications in micro- and opto-electronics [1,2]. Consequently, many research groups are interested in synthesising GaN. Two methods have been principally developed: (i) synthesis of thin films by epitaxy [3,4] (ii) synthesis of bulk GaN by high pressure method [5,6]. The new proposed process leads to fine microcrystallites of GaN with the wurtzite-type structure. The chemical purity can be optimised versus the synthesis mechanism. The size and shape of the crystallites would be influenced by the nature of the nitriding additive and the thermodynamical conditions (pressure and temperature) used for the synthesis. |
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| Keywords: | High pressure GaN solvothermal preparation |
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