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Design of a device for the simultaneous application of uniaxial stress and hydrostatic pressure
Authors:Markus Meier  Hans D Hochheimer  Alf Adams  Pei-Herng Hor
Institution:1. Department of Physics , Colorado State University , Fort Collins, Colorado, 80523, U.S.A.;2. Department of Physics , University of Surrey , Guildford, GU2 5XH, England;3. Texas Center for Superconductivity, University of Houston , Houston, Texas, 77204, U.S.A.
Abstract:Abstract

The design of a device for the simultaneous application of uniaxial stress and hydrostatic pressure is presented. We discuss its usefulness for the studies of semiconductor devices and high Tc superconductors.
Keywords:New high pressure device  semiconductor devices  high temperature superconductors
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