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The charge-density-wave transition in Lu5Ir4Si10 under uniaxial pressure |
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| Authors: | M. Giffhorn B. Becker A. A. Menovsky J. A. Mydosh G. J. Nieuwenhuys S. Ramakrishnan |
| Affiliation: | 1. Inst. f. Technische Physik, Techn. Univ. Braunschweig , Mendelssohnstr 2, 0-38104, Braunschweig, Germany;2. Kamerlingh Onnes Laboratory, Leiden University , 2300, RA, Leiden, The Netherlands;3. Van der Waals Zeeman Laboratory, University of Amsterdam , The Netherlands;4. Tata Institute of Fundamental Research , Mumbai, 400 005, India |
| Abstract: | Abstract An uniaxial pressure cell for low temperature use is described in detail. Then we present data of the electrical resistance of single crystals of Lu5Ir4Si10, which is known to show a charge-density-wave transition around 83 K and to become superconducting near 3.8 K, both phenomena being anticorrelated under pressure. Since the CDW in Lu5Ir4Si10 is a quasi one-dimensional phenomenon because of a chain-like structure, it responds to uniaxial pressure in a specific way. |
| Keywords: | Charge density wave high pressure techniques Lu5Ir4Si10 uniaxial pressure |