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The growth and physics of ultra-high-mobility two-dimensional hole gas on (311)A GaAs surface |
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| Authors: | M. Henini P. J. Rodgers P. A. Crump B. L. Gallagher G. Hill |
| Affiliation: | a Department of Physics, University of Nottingham Nottingham NG7 2RD United Kingdom b Department of Electronic Engineering, University of Sheffield Sheffield S1 3JD United Kingdom |
| Abstract: | We report on the molecular beam epitaxy growth of modulation-doped GaAs-(Ga,Al)As heterostructures on the (311)A GaAs surface using silicon as the acceptor. Two-dimensional hole gases (2DHGs) with low-temperature hole mobility exceeding 1.2×106 cm2 V−1 s−1 with carrier concentrations as low as 0.8×1011 cm−2 have been obtained. This hole mobility is the highest ever observed at such low densities by any growth technique. We also report the first observation of persistent photoconductivity in a 2DHG. An analysis of the number density and temperature dependence of the mobility leads us to conclude that the mobility is limited by phonon scattering above 4 K and interface scattering at lower temperatures. |
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