Lattice reordering in Pb implanted Ge crystals |
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Authors: | S U Campisano P Baeri G Ciavola G Foti |
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Institution: | (1) Istituto di Struttura della Materia dell'Università, Catania, Corso Italia, 57, I-95129 Catania, Italy |
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Abstract: | Channeling effect and sheet resistivity techniques have been used to investigate the damage induced by 40 keV Pb implantation
in Ge crystals. At 450° the reordering of the Ge lattice occurs simultaneously to the out-diffusion of the implanted Pb atoms
while the recovery of the sheet resistivity occurs at higher temperatures. 90% of the implanted atoms still retained in the
crystal are located in substitutional sites.
Work supported in part by Centro Siciliano di Fisica Nucleare e di Structura della Materia and by Gruppo Nazionale di Struttura
della Materia del Consiglio Nazionale delle Ricerche. |
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Keywords: | 61 80 |
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