Low-temperature magnetoresistance due to weak localization in lightly doped semiconductors |
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Authors: | AI Veinger AG Zabrodskii TV Tisnek SI Goloshchapov |
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Institution: | Ioffe Physico-Technical Institute, Russian Academy of Sciences, St Petersburg 194021, Russian Federation |
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Abstract: | The first observation of low-temperature magnetoresistance (MR) of interference nature in the case of a light doping is reported. The MR occurs in n- and p-type Ge samples at a frequency of 10 GHz at temperatures below 30 K in weak magnetic fields on the background of the classical MR effect associated with electrons in different valleys (n-Ge) and with heavy and light holes (p-Ge). |
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Keywords: | 72 20 My |
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