Weak antilocalization in thin films of the Bi2Te2.7Se0.3 solid solution

A technology has been developed for the preparation of thin films of the Bi₂Te_2.7Se_0.3 solid solution through the thermal evaporation in a vacuum using the “hot-wall” method. The high quality of the thin films thus prepared has been confirmed by the X-ray diffraction and Raman scattering data. The electron transport has been investigated over wide ranges of temperatures (1.4–300 K) and magnetic fields (up to 8 T). It has been assumed that the observed weak antilocalization is associated with the dominant contribution from the surface states of a topological insulator. The dephasing length has been estimated.