Field-effect transistor structures on the basis of poly(3-hexylthiophene), fullerene derivatives [60]PCBM, [70]PCBM,and nickel nanoparticles

Organic field-effect transistor (OFET) structures with the active layers on the basis of composite films of semiconductor polymer poly(3-hexylthiophene) (P3HT), fullerene derivatives 60]PCBM, 70]PCBM, and nickel (Ni) nanoparticles are obtained, and their optical, electrical, and photoelectrical properties are studied. It is shown that introducing Ni nanoparticles into P3HT: 60]PCBM and P3HT: 70]PCBM films leads to an increase in the absorption and to quenching of photoluminescence of the composite in the 400–600 nm spectral band due to the plasmon effect. In P3HT: 60]PCBM: Ni and P3HT: 70]PCBM: Ni OFET structures at the P3HT: 60]PCBM and P3HT: 70]PCBM concentrations of ~1: 1 and Ni concentrations of ~3–5 wt %, current–voltage (I–V) characteristics typical of ambipolar OFETs with the dominant hole conduction are observed. The charge-carrier (hole) mobilities calculated from the I–V characteristic at V_G =–10 V were found to be ~0.46 cm²/(V s) for P3HT: 60]PCBM: Ni and ~4.7 cm²/(V s) for P3HT: 70]PCBM: Ni, which means that the mobility increases if 60]PCBM in the composition is replaced with 70]PCBM. The effect of light on the I–V characteristics of P3HT: 60]PCBM: Ni and P3HT: 70]PCBM: Ni OFETs is studied.