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Transparent conducting antimony-doped tin oxide films deposited on flexible substrates by r.f. magnetron-sputtering
Authors:X Hao  J Ma  D Zhang  X Xu  Y Yang  H Ma  S Ai
Institution:(1) School of Physics and Microelectronics, Shandong University, Jinan, Shandong, 250100, P.R. China, CN;(2) State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong, 250100, P.R. China, CN
Abstract:Transparent conducting antimony-doped tin oxide (SnO2:Sb) films were deposited on organic substrates by r.f. magnetron-sputtering. Polycrystalline films with a resistivity of ≈ 6.5×10-3 Ω cm, a carrier concentration of≈ 1.2×1020 cm-3 and a Hall mobility of ≈ 9.7 cm2 v-1 s-1 were obtained. The average transmittance of these films reached 85% in the wavelength range of the visible spectrum. Received: 20 April 2001 / Accepted: 23 July 2001 / Published online: 17 October 2001
Keywords:PACS: 61  82  Fk  73  61  -r  81  15  Cd
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