Transparent conducting antimony-doped tin oxide films deposited on flexible substrates by r.f. magnetron-sputtering |
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Authors: | X Hao J Ma D Zhang X Xu Y Yang H Ma S Ai |
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Institution: | (1) School of Physics and Microelectronics, Shandong University, Jinan, Shandong, 250100, P.R. China, CN;(2) State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong, 250100, P.R. China, CN |
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Abstract: | Transparent conducting antimony-doped tin oxide (SnO2:Sb) films were deposited on organic substrates by r.f. magnetron-sputtering. Polycrystalline films with a resistivity of
≈ 6.5×10-3 Ω cm, a carrier concentration of≈ 1.2×1020 cm-3 and a Hall mobility of ≈ 9.7 cm2 v-1 s-1 were obtained. The average transmittance of these films reached 85% in the wavelength range of the visible spectrum.
Received: 20 April 2001 / Accepted: 23 July 2001 / Published online: 17 October 2001 |
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Keywords: | PACS: 61 82 Fk 73 61 -r 81 15 Cd |
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