Effect of rapid thermal annealing on the properties of thin dielectric films of gadolinium, titanium, and erbium oxides on the silicon carbide surface |
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| Authors: | Yu Yu Bacherikov N L Dmitruk R V Konakova O S Kondratenko O S Lytvyn V V Milenin O B Okhrimenko L M Kapitanchuk A M Svetlichnyi V V Polyakov A A Shelcunov |
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| Institution: | (1) Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 45, Kiev, 03028, Ukraine;(2) Paton Institute of Electric Welding, National Academy of Sciences of Ukraine, Kiev, Ukraine;(3) Taganrog State Radio Engineering University, Nekrasovskiĭ pr. 39, Taganrog, 347928, Russia |
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| Abstract: | The effect of rapid thermal annealing on the properties of Ti, Ga, and Er oxide films on silicon carbide are studied by the methods of atomic force microscopy, monochromatic ellipsometry, optical absorption, and photoluminescence. The atomic composition of these films is analyzed as a function of the annealing time. The phase composition of the Ti, Ga, and Er oxide films on silicon carbide is shown to depend on the annealing time. |
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