| Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack＊ |
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| 作者姓名： | 张雪锋 徐静平 黎沛涛 李春霞 官建国 |
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| 作者单位： | Department of Electronic Science & Technology, Huazhong University
of Science and Technology, Wuhan, 430074, China;Department of Electronic Science & Technology, Huazhong University
of Science and Technology, Wuhan, 430074, China;Department of Electrical & Electronic Engineering, the University
of Hong Kong, Pokfulam Road, Hong Kong, China;Department of Electrical & Electronic Engineering, the University
of Hong Kong, Pokfulam Road, Hong Kong, China;State Key Laboratory of Advanced Technology for Materials Synthesis
and Processing,
Wuhan University of Technology, Wuhan 430070, China |
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| 基金项目： | Project supported by the National Natural Science
Foundation of China (Grant No~60776016), the RGC of HKSAR, China (Grant
No~HKU7142/05E), and Open Foundation of State Key Laboratory of Advanced
Technology for Materials Synthesis and Processing (Grant No~ |
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| 摘 要： | A physical model for mobility degradation by interface-roughness scattering and Coulomb scattering is proposed for SiGe p-MOSFET with a high-k dielectric/SiO2 gate stack. Impacts of the two kinds of scatterings on mobility degradation are investigated. Effects of interlayer （SiO2） thickness and permittivities of the high-k dielectric and interlayer on carrier mobility are also discussed. It is shown that a smooth interface between high-k dielectric and interlayer, as well as moderate permittivities of high-k dielectrics, is highly desired to improve carriers mobility while keeping alow equivalent oxide thickness. Simulated results agree reasonably with experimental data.
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| 关 键 词： | 电介质 散射理论 退化 物理特征 |
| 文章编号： | 1009-1963/2007/16（12）/3820-07 |
| 收稿时间： | 2007-04-19 |
| 修稿时间： | 2007-05-14 |
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