| Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack＊ |
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| 引用本文： | 张雪锋,徐静平,黎沛涛,李春霞,官建国. Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack＊[J]. 中国物理, 2007, 16(12): 3820-3826 |
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| 作者姓名： | 张雪锋 徐静平 黎沛涛 李春霞 官建国 |
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| 作者单位： | Department of Electronic Science & Technology, Huazhong Universityof Science and Technology, Wuhan, 430074, China;Department of Electronic Science & Technology, Huazhong Universityof Science and Technology, Wuhan, 430074, China;Department of Electrical & Electronic Engineering, the Universityof Hong Kong, Pokfulam Road, Hong Kong, China;Department of Electrical & Electronic Engineering, the Universityof Hong Kong, Pokfulam Road, Hong Kong, China;State Key Laboratory of Advanced Technology for Materials Synthesisand Processing, Wuhan University of Technology, Wuhan 430070, China |
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| 基金项目： | Project supported by the National Natural ScienceFoundation of China (Grant No~60776016), the RGC of HKSAR, China (GrantNo~HKU7142/05E), and Open Foundation of State Key Laboratory of AdvancedTechnology for Materials Synthesis and Processing (Grant No~ |
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| 摘 要： | A physical model for mobility degradation by interface-roughness scattering and Coulomb scattering is proposed for SiGe p-MOSFET with a high-k dielectric/SiO2 gate stack. Impacts of the two kinds of scatterings on mobility degradation are investigated. Effects of interlayer （SiO2） thickness and permittivities of the high-k dielectric and interlayer on carrier mobility are also discussed. It is shown that a smooth interface between high-k dielectric and interlayer, as well as moderate permittivities of high-k dielectrics, is highly desired to improve carriers mobility while keeping alow equivalent oxide thickness. Simulated results agree reasonably with experimental data.
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| 关 键 词： | 电介质 散射理论 退化 物理特征 |
| 文章编号： | 1009-1963/2007/16（12）/3820-07 |
| 收稿时间： | 2007-04-19 |
| 修稿时间： | 2007-05-14 |
Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack |
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| Zhang Xue-Feng,Xu Jing-Ping,Lai Pui-To,Li Chun-Xia and Guan Jian-Guo. Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack[J]. Chinese Physics, 2007, 16(12): 3820-3826 |
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| Authors: | Zhang Xue-Feng Xu Jing-Ping Lai Pui-To Li Chun-Xia Guan Jian-Guo |
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| Affiliation: | Department of Electrical & Electronic Engineering, the Universityof Hong Kong, Pokfulam Road, Hong Kong, China; Department of Electronic Science & Technology, Huazhong Universityof Science and Technology, Wuhan, 430074, China; State Key Laboratory of Advanced Technology for Materials Synthesisand Processing, Wuhan University of Technology, Wuhan 430070, China |
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| Abstract: | A physical model for mobility degradation by interface-roughness scatteringand Coulomb scattering is proposed for SiGe p-MOSFET with a high-$k$dielectric/SiO$_{2}$ gate stack. Impacts of the two kinds of scatterings onmobility degradation are investigated. Effects of interlayer (SiO$_{2})$thickness and permittivities of the high-$k$ dielectric and interlayer oncarrier mobility are also discussed. It is shown that a smooth interfacebetween high-$k$ dielectric and interlayer, as well as moderate permittivitiesof high-$k$ dielectrics, is highly desired to improve carriers mobility whilekeeping a low equivalent oxide thickness. Simulated results agree reasonablywith experimental data. |
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| Keywords: | MOSFET high-$k$ dielectric SiGe interface roughness scattering Coulombscattering |
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