Ta2O5绝缘层厚度对ZnO基薄膜晶体管器件性能的影响

报道了不同厚度TaO5栅绝缘层对氧化锌薄膜晶体管器件性能的影响.在室温下用射频磁控溅射分别制备了100,85,60,40 nm厚度的Ta2O5薄膜作为绝缘层的一组底栅氧化锌薄膜晶体管器件.从实验结果可以得出如下结论:随着Ta2O5栅绝缘层厚度的增加,相应器件的场效应迁移率下降,其数值分别是50.5,59.3,63.8,...

Effect of Ta_2O_5 Thickness on The Performances of ZnO-based Thin Film Transistors

Bottom-gate ZnO thin-film transistors (ZnO-TFTs) were fabricated with Ta2O5 film as the insulator. Ta2O5 film was grown by the radio-frequency magnetron sputtering at room temperature. The thickness of the Ta2O5 layers were 100,85,60,40 nm separately. The effect of the thickness on the performance of the ZnO-TFTs was studied. With the thickness of the insulator decreased from 100,85,60 nm to 40 nm, the field effect mobility increased from 50.5, 59.3, 63.8 to 71.2 cm2/V · s. The surface morphology of the Ta2O5 films were checked by the atomic force microscope,which showed that the root mean square (RMS) of the Ta2O5 films roughness decreases with decreasing the insulator thickness. The Ion/Ioff ratio and the threshold voltage are changed with the insulator thickness.