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Dynamics of the BiTeI lattice at high pressures |
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| Authors: | Yu S Ponosov T V Kuznetsova O E Tereshchenko K A Kokh E V Chulkov |
| Institution: | 1. Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, ul. S. Kovalevskoi 18, Yekaterinburg, 620990, Russia 2. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia 3. Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090, Russia 4. Tomsk State University, pr. Lenina 36, Tomsk, 634050, Russia 5. Sobolev Institute of Geology and Mineralogy, Siberian Branch, Russian Academy of Sciences, pr. Akademika Koptyuga 3, Novosibirsk, 630090, Russia 6. Donostia International Physics Center, 20018 San Sebastian/Donostia, Basque Country, Spain 7. Departamento de Fisica de Materailes UPV/EHU, Facultad de Ciencias Quimicas, UPV/EHU, 20080, San Sebastian/Donostia, Basque Country, Spain 8. Centro de Fisica de Materailes CFM-MPC, Centro Mixto CSIC-UPV/EHU, 20080, San Sebastian/Donostia, Basque Country, Spain |
| Abstract: | Raman measurements of the phonon spectrum of BiTeI at pressures of up to 20 GPa have been performed. A decrease in the linewidth of E2 vibration by almost a factor of 2 with an increase in the pressure to 3 GPa has been detected. The frequencies of all four Raman active modes increase monotonically with the pressure. These lines are observed in spectra up to ～8 GPa. Sharp change in the spectrum occurs at pressures of 8–9 GPa, indicating a transition to the high-pressure phase, which holds up to 20 GPa. This transition is reversible and hardly has any hysteresis. A sample in the high-pressure phase is single crystal. |
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