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Exploring diamagnetic susceptibility of impurity doped quantum dots in presence of Gaussian white noise
Institution:1. Department of Chemistry, Physical Chemistry Section, Visva Bharati University, Santiniketan, Birbhum 731235, West Bengal, India;2. Department of Chemistry, Bishnupur Ramananda College, Bishnupur, Bankura 722122, West Bengal, India;3. Department of Chemistry, Brahmankhanda Basapara High School, Basapara, Birbhum 731215, West Bengal, India;1. Department of Electrical Engineering, Hsiuping University of Science and Technology, Taichung 412, Taiwan;2. Department of Applied Physics, Tunghai University, Taichung 407, Taiwan;3. iSentek Ltd., Advanced Sensor Laboratory, New Taipei City 221, Taiwan;4. Department of Physics, National Chung Cheng University, Chia-Yi 621, Taiwan;1. Laboratoire de Matière Condensée et Sciences Interdisciplinaires (LaMCScI), Group of Optoelectronic of Semiconductors and Nanomaterials, ENSET, Mohammed V University in Rabat, Morocco;2. LCP-A2MC, Institut de Chimie, Physique et Matériaux, Université de Lorraine, Metz, France;3. Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia;1. Young Researchers and Elite Club, Zarghan Branch, Islamic Azad University, Zarghan, Iran;2. Institute of Higher Education of Loghman Hakim, Aq qala (Agh Ghala), Golestan, Iran;3. Zarghan Branch, Islamic Azad University, Zarghan, Iran;4. Department of Physics, College of Sciences, Shiraz University, Shiraz 71454, Iran;1. Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia;2. Department of Physics, Donbass State Engineering Academy, Shcadinova 72, 84313 Kramatorsk, Ukraine;3. Centro de Investigación en Ciencias, Instituto de Ciencias Básicas y Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos, Mexico;4. Department of Physics, “Politehnica” University of Bucharest, 313 Splaiul Independentei, Bucharest RO-060042, Romania;1. Physical Department, Anshan Normal College, No. 43 Pingan Street, Tiedong District, Anshan 114005, PR China;2. School of Materials Science and Engineering, Tongji University, Shanghai 201804, PR China
Abstract:We explore diamagnetic susceptibility (DMS) of impurity doped quantum dot (QD) in presence of Gaussian white noise. Noise has been introduced to the system additively and multiplicatively. In view of these profiles of DMS have been pursued with variations of several important quantities e.g. magnetic field strength, confinement frequency, dopant location, dopant potential, and aluminium concentration, both in presence and absence of noise. We have invariably envisaged noise-induced suppression of DMS. Moreover, the extent of suppression noticeably depends on mode of application (additive/multiplicative) of noise. The said mode of application also plays a governing role in the onset of saturation of DMS values. The present study provides a deep insight into the promising role played by noise in controlling effective confinement imposed on the system which bears significant relevance.
Keywords:Electronic materials  Nanostructures  Quantum wells  Defects  Magnetic properties
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