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Effect of electric-field-assisted thermal treatment on the strain and ferroelectric properties of (100)-oriented ferroelectric Pb(Zr0.52Ti0.48)O3 thin films
Affiliation:1. Department of Physics, School of Science, Harbin Institute of Technology, 150001 Harbin, China;2. Key Laboratory of Micro-Optics and Photonic Technology of Heilongjiang Province, China;3. High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics of Chinese Academy of Sciences, 100029 Beijing, China;4. Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences, China;1. Department of Physics, Yancheng Institute of Technology, Jiangsu 224051, China;2. National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;1. Institute of Carbon Science and Technology, Shinshu University, Nagano 380-8553, Japan;2. Nissin Kogyo Co. Ltd., 801 Kazawa, Tomi-shi, Nagano 386-8505, Japan;1. Key Laboratory of Special Functional Aggregated Materials & Key Laboratory of Colloid and Interface Chemistry (Shandong University), Ministry of Education, School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100, PR China;2. School of Chemical and Environmental Engineering, Jiujiang University, Jiujiang, Jiangxi 332005, PR China;1. Institute of Physics, Faculty of Science, P.J. Šafárik University, Park Angelinum 9, 041 54 Košice, Slovakia;2. Applied Chemistry Department, V.N. Karazin Kharkiv National University, Svobody Sq. 4, 61022 Kharkiv, Ukraine;3. Department of Chemistry, V.N. Karazin Kharkiv National University, Svobody Sq. 4, 61022 Kharkiv, Ukraine;4. Institute of Chemistry, Jan Kochanowski University of Humanities and Sciences, Świętokrzyska 15G, 25-406 Kielce, Poland
Abstract:
Ferroelectric Pb(Zr0.52Ti0.48)O3 thin films were deposited on the Pt/Ti/SiO2/Si substrate by a sol-gel method. As a direct electric field was applied on the films during thermal treatment, strain behavior and ferroelectric properties have been investigated. X-ray diffraction patterns show that great tensile strain exists nearby the interface of the 250 nm thin film while thermal treatment assisted with direct electric field can obviously relax it. The analysis of hysteresis loops indicates that the remnant polarization increases with the thermal treatment time. These results suggest that electric-field-assisted thermal treatment is an effective way to reduce films' tensile strain through the local plastic deformation in Pt layer and enhance the remnant polarization.
Keywords:A Nanostructures  B Sol-gel growth  C X-ray diffraction  D Surface properties
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