Effect of CdS modification on photoelectric properties of TiO2/PbS quantum dots bulk heterojunction |
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| Institution: | 1. College of Science, Tianjin University of Technology, Tianjin 300384, China;2. Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin University of Technology, Tianjin 300384, China;3. School of Science, Tianjin University of Technology and Education, Tianjin 300222, China;1. Faculty of Mechanical Engineering, K. N. Toosi University of Technology, Tehran, Iran;2. Institute of Biomaterials and Biomedical Engineering, University of Toronto, Toronto, Ontario, Canada M5S 3G9;1. Post Graduate & Research Department of Physics, AVVM Sri Pushpam College (Autonomous), Poondi, Thanjavur 613 503, Tamil Nadu, India;2. Post Graduate & Research Department of Physics, Rajah Serfoji Government College (Autonomous), Thanjavur 613 005, Tamil Nadu, India;3. Department of Nanotechnology, Noorul Islam Centre for Higher Education, Noorul Islam University, Kumaracoil 629 180, Tamil Nadu, India;1. International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST), No.1 Dai Co Viet, Hanoi, Vietnam;2. Advanced Institute of Science and Technology (AIST), Hanoi University of Science and Technology (HUST), No.1 Dai Co Viet, Hanoi, Vietnam;3. University of Transportation and Communication, No. 3 Cau Giay, Hanoi, Vietnam;4. Vietnam-Japan International Institute for Science of Technology (VJIIST), Hanoi University of Science and Technology (HUST), No.1 Dai Co Viet, Hanoi, Vietnam;1. School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, 86 Hongqi Road, Ganzhou 341000, Jiangxi, PR China;2. Department of Environmental Science and Engineering, School of Chemistry and Environment, Beihang University Beijing, 37 Xueyuan Road, Haiding Region, Beijing 100191, PR China;3. State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, 2 Xueyuan Road, Fuzhou 350002, PR China |
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| Abstract: | TiO2/PbS(CdS) quantum dots (QDs) bulk heterojunction has been fabricated by successive ionic layer adsorption and reaction method via alternate deposition of PbS and CdS QDs. In comparison with TiO2/PbS heterojunction, the incident photon to current conversion efficiency was increased almost 50% in the visible region. Meantime, the short-circuit current and open-circuit voltage were enhanced 200% and 35% respectively. The influence mechanism of CdS is related to reduction of trap state density at TiO2/PbS interface and PbS QDs surface by the discussion of the dark current density–voltage curves, the transient photocurrent response curves and the electrochemical impedance spectra spectroscopy (EIS). |
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| Keywords: | Quantum dots Bulk heterojunction Defect states Trap states |
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