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Ab-initio study of structural phase transitions and optoelectronic properties in BeH2 at increasing pressure
Institution:1. Hebei Key Laboratory of Photo-Electricity Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, PR China;2. Stanford Research Computing Center, Stanford University, Stanford, CA 94305, United States;1. Post Graduate & Research Department of Physics, AVVM Sri Pushpam College (Autonomous), Poondi, Thanjavur 613 503, Tamil Nadu, India;2. Post Graduate & Research Department of Physics, Rajah Serfoji Government College (Autonomous), Thanjavur 613 005, Tamil Nadu, India;3. Department of Nanotechnology, Noorul Islam Centre for Higher Education, Noorul Islam University, Kumaracoil 629 180, Tamil Nadu, India;1. Faculty of Mechanical Engineering, K. N. Toosi University of Technology, Tehran, Iran;2. Institute of Biomaterials and Biomedical Engineering, University of Toronto, Toronto, Ontario, Canada M5S 3G9;1. School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, 86 Hongqi Road, Ganzhou 341000, Jiangxi, PR China;2. Department of Environmental Science and Engineering, School of Chemistry and Environment, Beihang University Beijing, 37 Xueyuan Road, Haiding Region, Beijing 100191, PR China;3. State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, 2 Xueyuan Road, Fuzhou 350002, PR China;1. Department of Physics and Astrophysics, University of Delhi, Delhi, India;2. Physics Department, Miranda House, University of Delhi, Delhi, India;3. Department of Applied Physics, Delhi Technological University, Delhi, India;4. CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, Delhi, India
Abstract:The structural stability, electronic and optical properties of BeH2 under high pressure have been studied using the density functional theory (DFT) employing full potential-linearized augmented plane wave (FP-LAPW) method. The exchange correlation functional has been solved using the generalized gradient approximation. The calculations show that BeH2 becomes unstable upon application of pressure. At a pressure of 29.40 GPa the ground state α-BeH2 transforms to hypothetical phase β-BeH2 and further at a pressure of 53.77 GPa (with respect to the ground state α-BeH2) β-BeH2 transforms to γ-BeH2. In α-BeH2 phase it remains as an insulator while in β-BeH2 phase its behavior becomes metallic. But upon further increase in pressure it becomes a semiconductor in γ-BeH2 phase. Hence the possibility of obtaining high-pressure phases with superconducting properties cannot be ruled out. There occurs a huge equilibrium volume collapse at α- to β-phase transition and relatively smaller volume changes at β- to γ-phase transition. Our obtained value of dielectric constant (3.0) for α-BeH2 is in excellent agreement with earlier reported value (3.1). Also BeH2 shows anisotropic behavior in all three studied phases.
Keywords:Density functional theory  Phase transition  Hydrogen storage  Optoelectronic properties
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