Formation of Si nanowires by the electrochemical reduction of porous Ni/SiO2 blocks in molten CaCl2 |
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| Institution: | 1. Instituto de Telecomunicações, Instituto Superior Técnico, Av. Rovisco Pais, P-1049-001 Lisboa, Portugal;2. Department of Bioengineering, Instituto Superior Técnico, UL, Av. Rovisco Pais, P-1049-001 Lisboa, Portugal;1. Department of Structures and Civil Engineering, University Malaya, 50603 Kuala Lumpur, Malaysia;2. School of Engineering, Griffith University, Gold Coast Campus, Southport 4222, Australia;3. School of Engineering, The University of Newcastle, Callaghan, New South Wales 2308, Australia;2. Knee Surgery Division, Faculty of Medicine, Institute of Orthopedics and Traumatology, University of São Paulo, São Paulo, Brazil;3. Musculoskeletal Radiology Department, Faculty of Medicine, Institute of Orthopedics and Traumatology, University of São Paulo, São Paulo, Brazil;1. South-Ukrainian University, Staroportofrankovskaya Str., 26, 65008, Odessa, Ukraine;2. Tampere University of Technology, P.O. Box 692, FI-33101 Tampere, Finland |
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| Abstract: | Silicon nanowires (SiNWs) were prepared by the electrochemical reduction of solid Ni/SiO2 blocks in molten CaCl2 at 1173 K. The SiNWs have diameter distributions ranging from 80 to 350 nm, and the nickel–silicon droplets are found on the tips of the nanowires. The growth mechanism of SiNWs was investigated, which confirmed that the nano-sized nickel–silicon droplets formed at the Ni/SiO2/CaCl2 three-phase interline. The droplets lead to the oriented growth of SiNWs. Formation of nano-sized nickel–silicon droplets suggests that this method could be a potential way to produce nano-sized metal silicides. |
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| Keywords: | Nanostructures Alloys Semiconductors Chemical synthesis |
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