Effect of thermal annealing on ZnO:Al thin films grown by spray pyrolysis |
| |
| Authors: | A El Manouni FJ Manjn M Perales M Mollar B Marí MC Lopez JR Ramos Barrado |
| |
| Institution: | aDept. de Física Aplicada, Universitat Politècnica de València, Camí de Vera s/n, E-46022 València, Spain;bDept de Physique, Université Hassa II, FST 20650 Mohammédia, Morocco;cDept. de Física Aplicada I, Universidad de Málaga, Av. de Cervantes 2, E-29071 Málaga, Spain |
| |
| Abstract: | We report the effect of thermal annealing in air on the structural and optical properties of undoped and aluminium-doped (1%–4%) zinc oxide (AZO) thin films, grown by the spray pyrolysis technique on quartz substrates. Films were characterized by X-ray diffraction, low-temperature photoluminescence, electrical resistivity, and Raman spectroscopy after annealing at temperatures between 500 and 900  C. Annealing in air improves the long-range order crystalline quality of the bulk crystals, but promotes a number of point defects in the surface affecting both the resistivity and the photoluminescence. |
| |
| Keywords: | Zinc oxide II– VI semiconductors Wide bandgap semiconductors |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
