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Saturation field direction dependence of domain structures in NiFe elements |
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| Authors: | ZB Guo YK Zheng GC Han JJ Qiu LH An |
| Institution: | a Data Storage Institute, 5 Engineering Drive 1, off Kent Ridge Crescent, National University of Singapore, Singapore 117608, Singapore b Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Singapore |
| Abstract: | The domain structures in NiFe elements were studied by magnetic force microscopy measurement and micromagnetic modeling. The remanent states in the elements were dependent on the direction of the saturation field. The “S” and “U” states were observed at remanence by applying the saturation field at different directions. The “S” and “U” states are metastable: magnetic force microscopy tip field-induced switching from the “S” and “U” states to the flux closure configuration was observed. |
| Keywords: | 75 60 -d 75 70 Kw |
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