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Enhanced magnetoresistance in La0.82Sr0.18MnO3-π-conjugated semiconducting polymer heterostructure
Authors:Jitendra Kumar  P.K. Siwach  Ramadhar Singh  O.N. Srivastava
Affiliation:a National Physical Laboratory, Dr K.S. Krishnan Road, New Delhi 110012, India
b Department of Physics, Banaras Hindu University, Varanasi 221005, India
c Department of Chemistry, University of Delhi, Delhi 110007, India
Abstract:We report a large enhancement (∼90%) in magnetoresistance in La0.82Sr0.18MnO3 (LSMO) layers by incorporating a π-conjugated semiconducting polymer layer in between them. The epitaxial LSMO layers were deposited by DC magnetron sputtering on SrTiO3 single crystal substrates and have FM transition temperature (TC)∼310 K. A semiconducting polymer poly(3-octylthiophene) (P3OT) layer was deposited over the epitaxial LSMO layer by solution dip coating technique and with subsequent deposition of another epitaxial LSMO layer, forming a LSMO-P3OT-LSMO heterostructure. The effect of P3OT incorporation on magnetotransport properties of this heterostructure has been examined in the temperature range 77-350 K. Large MR enhancement observed near room temperature in the FM regime is explained in terms of efficient magnetic field dependent carrier injection at LSMO/P3OT interface.
Keywords:75.70.Cn   75.47.Lx   72.25.Mk
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