Correlation between Si-SiO2 heterojunction and Fowler-Nordheim conduction mechanism after soft breakdown in ultrathin oxides |
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Authors: | Changhua Tan |
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Institution: | Institute of Microelectronics, Peking University, Beijing 100871, People's Republic of China |
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Abstract: | A stress-induced defect band model is proposed to investigate the Fowler-Nordheim tunneling characteristics of ultrathin gate oxides after soft breakdown. Soft breakdown occurs when the average distance between stress-induced defects locally reaches a critical value to overlap the bound electron wavefunction on adjacent defects and to form a defect band. This model shows that an n+-poly-Si/N-SiO2/p-Si heterojunction structure is formed between electrodes at a local area after a soft breakdown in the ultrathin SiO2 and the soft breakdown current can be described in terms of the Fowler-Nordheim tunneling process with a barrier height of ∼1 eV. |
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Keywords: | 71 55 &minus i 72 20 &minus i 73 40 Qv |
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