|
|||||
|
|
Interfacial electronic states of an anthracene derivative deposited on a SiO2 /Si substrate |
|
| Authors: | Hiroyuki Sasaki Yutaka Wakayama Toyohiro Chikyow Masaki Imamura Kenji Kobayashi |
| Affiliation: | a Nanomaterials Laboratory, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan b Nanoscale Quantum Conductor Array Project, JCORP, JST, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan c Graduate School of Science and Technology, Kobe University, 1-1 Rokkodai, Nada-ku, Kobe, Hyogo 657-8501, Japan d Department of Mechanical Engineering, Kobe University, 1-1 Rokkodai, Nada-ku, Kobe 657-8501, Japan e Department of Chemistry, Shizuoka University, 836 Ohya, Shizuoka, Shizuoka 422-8529, Japan |
| Abstract: | The interfacial electronic states of an anthracene derivative (9,10-bis (methylthio) anthracene) on a SiO2/Si(100) substrate were studied using ultraviolet photoelectron spectroscopy (UPS). From the UPS measurements, the work function of the sample surface was found to decrease with increasing molecular coverage in the sub-monolayer range. It is concluded that an interfacial electronic dipole (about 0.34 eV) forms at the molecule/ SiO2 interface and decreases the effective work function. |
| Keywords: | 73.20 73.40 72.80.L 79.60 |
| 本文献已被 ScienceDirect 等数据库收录！ | |