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Bulk Sn1−xMnxO2 magnetic semiconductors without room-temperature ferromagnetism |
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| Authors: | K.H. Gao X.J. Liu H. Liu |
| Affiliation: | a Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Faculty of Science, Institute of Advanced Materials Physics, Tianjin University, Tianjin 300072, China b Analysis Center, Tianjin University, Tianjin 300072, China c College of Information Technical Science, Nankai University, Tianjin 300071, China |
| Abstract: | Polycrystalline Sn1−xMnxO2 (0≤x≤0.05) diluted magnetic semiconductors were prepared by solid-state reaction method and their structural and magnetic properties had been investigated systematically. The three Mn-doped samples (x=0.01, 0.03, 0.05) undergo paramagnetic to ferromagnetic phase transitions upon cooling, but their Curie temperatures are far lower than room temperature. The magnetization cannot be attributed to any identified impurity phase. It is also found that the magnetization increases with increasing Mn doping, while the ratio of the Mn ions contributing to ferromagnetic ordering to the total Mn ions decreases. |
| Keywords: | 75.50.Pp 75.50.&minus y 75.30.&minus m |
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