Intersecting behaviour of nanoscale Schottky diodes I-V curves

We describe a new feature connected with Schottky barriers with nanosize dimensions. We found out by theoretical analysis that the I-V curves of such small diodes measured at different temperatures should intersect and consecutively at higher voltages larger current flows through the diode at lower temperatures. This effect which is at first glance in contradiction with the thermionic theory is caused by the series resistance influence. We show that the presence of the series resistance is a necessary condition of its observation. However, the intersection voltage—minimum voltage at which the intersection may occur—increases with the value of the series resistance and the diode dimensions for which the effect could be observable in Si diodes and the common series resistance values must be in submicrometer range. Diodes with several hundreds nanometers dimension have the intersection voltage ∼1 V. Analytical expression for the intersection voltage values was also derived.