| The conduction mechanism of stress induced leakage current through ultra-thin gate oxide under constant voltage stresses |
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| 引用本文： | 王彦刚,许铭真,谭长华,J.F.Zhang,段小蓉. The conduction mechanism of stress induced leakage current through ultra-thin gate oxide under constant voltage stresses[J]. 中国物理, 2005, 14(9): 1886-1891 |
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| 作者姓名： | 王彦刚 许铭真 谭长华 J.F.Zhang 段小蓉 |
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| 作者单位： | Institute of Microelectronics, Peking University, Beijing 100871, China;Institute of Microelectronics, Peking University, Beijing 100871, China;Institute of Microelectronics, Peking University, Beijing 100871, China;School of Engineering, Liverpool John Moores University,UK;Institute of Microelectronics, Peking University, Beijing 100871, China |
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| 基金项目： | Project supported by the Special Foundation for State Major Basic Research Program of China (Grant NoTG2000-036503). |
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| 摘 要： | The conduction mechanism of stress induced leakage current （SILC） through 2nm gate oxide is studied over a gate voltage range between 1.7V and stress voltage under constant voltage stress （CVS）. The simulation results show that the SILC is formed by trap-assisted tunnelling （TAT） process which is dominated by oxide traps induced by high field stresses. Their energy levels obtained by this work are approximately 1.9eV from the oxide conduction band, and the traps are believed to be the oxygen-related donor-like defects induced by high field stresses. The dependence of the trap density on stress time and oxide electric field is also investigated.
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| 关 键 词： | 电压传导装置 电压常量 仿真模型 电场 |
| 文章编号： | 1009-1963/2005/14（09）/1886-06 |
| 收稿时间： | 2005-03-18 |
| 修稿时间： | 2005-03-182005-04-13 |
The conduction mechanism of stress induced leakage current through ultra-thin gate oxide under constant voltage stresses |
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| Wang Yan-Gang,Xu Ming-Zhen,Tan Chang-Hu,Zhang J.F. and Duan Xiao-Rong. The conduction mechanism of stress induced leakage current through ultra-thin gate oxide under constant voltage stresses[J]. Chinese Physics, 2005, 14(9): 1886-1891 |
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| Authors: | Wang Yan-Gang Xu Ming-Zhen Tan Chang-Hu Zhang J.F. Duan Xiao-Rong |
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| Affiliation: | Institute of Microelectronics, Peking University, Beijing 100871, China; School of Engineering, Liverpool John Moores University,UK |
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| Abstract: | The conduction mechanism of stress induced leakage current (SILC) through 2{nm} gate oxide is studied over a gate voltage range between 1.7V and stress voltage under constant voltage stress (CVS). The simulation results show that the SILC is formed by trap-assisted tunnelling (TAT) process which isdominated by oxide traps induced by high field stresses. Their energy levels obtained by this work are approximately 1.9eV from the oxide conduction band, and the traps are believed to be the oxygen-related donor-like defects induced by high field stresses. The dependence of the trap density on stress time and oxide electric field is also investigated. |
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| Keywords: | stress induced leakage current oxygen-related donor-like defects trap-assisted tunnelling ultra-thin gate oxide |
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