功率MOSFET的负偏置温度不稳定性效应中的平衡现象

通过对功率金属氧化物半导体场效应晶体管在静态应力下的负偏置温度不稳定性的实验研究, 发现器件参数的退化随时间的关系遵循反应扩散模型所描述的幂函数关系, 并且在不同栅压应力下, 实验结果中均可观察到平台阶段的出现. 基于反应扩散理论的模型进行了仿真研究, 通过仿真结果分析和验证了此平台阶段对应于反应平衡阶段, 并且解释了栅压应力导致平台阶段持续时间不同的原因.关键词：功率金属氧化物半导体场效应晶体管负偏置温度不稳定性反应扩散模型

Flat-roof of dynamic equilibrium phenomenon in static negative biase temperature instability effect on power metal-oxide-semiconductor field-effect transistor*

The effect of static negative bias temperature instability stress on p-channel power metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated by experiment and simulation. The time evolution of the negative bias temperature instability degradation presents the trend which follows the reaction-diffusion (R-D) theory on the exaggerated time scale. A flat-roof section is observed under the varying stress condition, which can be considered as the dynamic equilibrium phase through the simulation verification based on the R-D model. The analysis of the simulated results also provides the explanation for the difference in the time duration of the dynamic equilibrium phase under the condition of varying stress voltage.
Keywords：power MOSFETnegative bias temperature instabilityreaction-diffusion model