Synchrotron radiation interference in front of the silicon absorption edge for silicon-on-insulator structures

The synchrotron radiation (SR) interference phenomenon has been for the first time observed in a strained silicon nanolayer deposited on a dielectric SiO₂ layer (∼150 nm) on Si (100) single crystalline substrates (silicon-on-insulator (SOI) structures). Strong oscillations of spectra intensity depending on photon energy have been detected in the energy range preceding the elementary silicon Si L _2,3 absorption edge (≤100 eV) at grazing angles of SR smaller than 21° in the X-ray photoeffect quantum yield structure. The phase of the spectra oscillation structure is reversed for small variations of grazing angle in the 4°–21° range. The silicon nanolayer thickness (∼180 nm) has been estimated in the three-layer, Si nanolayer-SiO₂-Si substrate structure with the use of neighbor maxima positions of ultrasoft X-ray radiation interference in XANES (X-ray absorption near edge structure) spectra. A decrease in the crystal lattice parameter of a strained silicon layer along the normal to substrate has been determined by X-ray diffraction. An increase in the Si-Si interatomic distances in the strained silicon nanolayer lattice of SOI structure has been found using ultrasoft X-ray emission spectroscopy data.