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Influence of Oxygen Vacancies on the Luminescence Spectra of Thin Bi4Ge3O12 Films
Authors:O. M. Bordun
Affiliation:(1) I. Franko L'vov National University, 50 Dragomanov Str., L'vov, 79005, Ukraine
Abstract:Luminescence spectra of thin Bi4Ge3O12 films annealed in air and in vacuum have been investigated. It has been established that the luminescence spectra for different forms of excitation consist of three bands with maxima at 2.70, 2.40, and 2.05 eV. The relation of the bands with maxima at 2.40 and 2.05 eV to the centers that incorporate an oxygen vacancy has been shown. The separated emission bands have been interpreted.
Keywords:ceramics  thin film  bismuth orthogermanate  luminescence spectra  oxygen vacancy
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